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For the Inventor, By the Inventor

Tokyo, Japan

Tohru Furuyama

USPTO Granted Patents = 49

Average Co-Inventor Count = 1.5

ph-index = 17

Forward Citations = 838(Granted Patents)


Location History:

  • Kanagawa, JP (1991)
  • South Burlington, VT (US) (1997 - 1999)
  • Tokyo, JP (1987 - 2002)

Company Filing History:

goldMedal49 out of 52,766 
 
Kabushiki Kaisha Toshiba
 patents

Years Active: 1987-2002

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Areas of Expertise:
Dynamic Random Access Memory
Semiconductor Memory
Memory Circuit
Clock Synchronous DRAM
Bias Voltage Generation Circuit
Memory Cell Unit
Screening Test Method
Static Random Access Memory
MOS Dynamic Semiconductor Memory Cell
Voltage Supply Controller
Data Writing Method
Memory Test Circuit
49 patents (USPTO):Explore Patents
1. 6381186 - Dynamic random access memory (2002-04-30),
2. 6317366 - Dynamic random access memory (2001-11-13),
3. 6307796 - Dynamic random access memory (2001-10-23),
4. RE37184 - Semiconductor memory and screening test method thereof (2001-05-22),
5. 6166975 - Dynamic random access memory (2000-12-25),
6. 616697 - Dynamic random access memory (2000-12-26),
7. 6101148 - Dynamic random access memory (2000-08-08),
8. 5890186 - Memory circuit with built-in cache memory (1999-03-30),
9. 5754481 - Clock synchronous type DRAM with latch (1998-05-19),
10. 5673229 - Dynamic random access memory (1997-09-30),
11. 5659507 - Clock synchronous type DRAM with data latch (1997-08-19),
12. 5568436 - Semiconductor device and method of screening the same (1996-10-22),
13. 5553024 - Semiconductor memory utilizing RAS and CAS signals to control the (1996-09-03),
14. 5532963 - Semiconductor memory and screening test method thereof (1996-07-02),
15. 5525820 - Semiconductor memory cell (1996-06-11),

Title: Innovator Spotlight: Tohru Furuyama

Introduction: Tohru Furuyama is a notable inventor based in Tokyo, Japan, recognized for his substantial contributions to the field of semiconductor technology. He holds an impressive portfolio of 49 patents, showcasing his expertise and innovation in the development of advanced memory systems.

Latest Patents: Furuyama's recent patents focus on dynamic random access memory (DRAM) technology. One of his noteworthy inventions describes a dynamic random access memory that utilizes multiple dynamic memory cells organized in rows and columns. It features a word line selecting circuit for selecting rows based on internal address signals and includes a sophisticated control circuit that manages the driving of word lines during voltage stress tests. Another significant invention involves a semiconductor memory device that comprises a memory cell equipped with a transfer N-channel MOS transistor. This memory device incorporates a charge pump circuit generating an internal power supply voltage and a decoder circuit which enhances the operational efficiency of the memory system.

Career Highlights: Furuyama is currently affiliated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His role involves pioneering developments in semiconductor memory technology, a critical area in the progression of electronic devices.

Collaborations: Throughout his career, Furuyama has collaborated with several distinguished professionals, including his coworkers Junichi Okamura and Natsuki Kushiyama. Their combined expertise fosters an environment of innovation that drives advancements within their projects.

Conclusion: Tohru Furuyama's contributions to dynamic random access memory technology have established him as a prominent figure in the field of semiconductor innovation. With a remarkable track record and ongoing collaborations, his work continues to influence the technological landscape significantly.

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