The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1996
Filed:
Aug. 02, 1994
Applicant:
Inventor:
Tohru Furuyama, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257296 ; 257297 ; 257306 ; 365149 ; 365182 ;
Abstract
A semiconductor memory cell of the present invention comprises a cascade gate including a plurality of cascade-connected MOS transistors and having one end connected to a read/write node, and a plurality of capacitors for information storage connected at one end to said MOS transistors, respectively, at the end remote from said node.
Furuyama, Tohru. (1996). Semiconductor memory cell (U.S. Patent No. 5525820). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5525820
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile