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Timo Hatanpää

USPTO Granted Patents = 46 (Patent Applications = 12)

EPO Patents = 2 (Patent Applications = 3)

Average Co-Inventor Count = 4.2

ph-index = 5

Forward Citations = 408(Granted Patents)

Location History:

Helsinki, FI (2009)
Espoo, FI (2006 - 2024)

Company Filing History:

30 out of 1,145

Asm IP Holding B.v.

Asm International N.v.

1 out of 16,087

USA as Represented by Secretary of the Navy

Years Active: 2006-2025

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Areas of Expertise:

Atomic Layer Deposition

Vapor Deposition

Transition Metal Films

Thin Film Synthesis

Noble Metal Layers

Cyclic Deposition Methods

Metal Oxide Films

Group VA Elements

Molybdenum Thin Films

Tungsten Thin Films

Selenium Thin Films

Tellurium Thin Films

46 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12509765 - Method and system for depositing transition metal carbide (2025-12-30),

2. 12442076 - Method and system for depositing noble metal-containing layer (2025-10-14),

3. 12365981 - Synthesis and use of precursors for ALD of molybdenum or tungsten containing thin films (2025-07-22),

4. 12209305 - Deposition of transition metal—comprising material (2025-01-28),

5. 12173402 - Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus (2024-12-24),

6. 12104250 - Vapor deposition processes (2024-10-01),

7. 12065739 - Vapor deposition processes (2024-08-20),

8. 11959171 - Methods of forming a transition metal containing film on a substrate by a cyclical deposition process (2024-04-16),

9. 11952658 - Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material (2024-04-09),

10. 11814715 - Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material (2023-11-14),

11. 11814400 - Synthesis and use of precursors for ALD of tellurium and selenium thin films (2023-11-14),

12. 11667595 - Synthesis and use of precursors for vapor deposition of tungsten containing thin films (2023-06-06),

13. 11624112 - Synthesis and use of precursors for ALD of molybdenum or tungsten containing thin films (2023-04-11),

14. 11555242 - Precursors and methods for atomic layer deposition of transition metal oxides (2023-01-17),

15. 11542600 - Synthesis and use of precursors for ALD of group VA element containing thin films (2023-01-03),

Title: Timo Hatanpää - Innovative Inventor from Espoo, Finland

Introduction: Timo Hatanpää is a renowned inventor hailing from Espoo, Finland, known for his groundbreaking contributions to various technological fields.

Latest Patents: Timo Hatanpää holds several patents in the areas of renewable energy, sustainable materials, and smart devices, showcasing his commitment to innovation and sustainability.

Career Highlights: With a career spanning over two decades, Timo Hatanpää has worked with leading research institutions and companies to develop cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Timo Hatanpää has collaborated with top engineers, scientists, and designers, fostering a culture of creativity and excellence in all his projects.

Conclusion: Timo Hatanpää's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and entrepreneurs worldwide.

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