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For the Inventor, By the Inventor

Espoo, Finland

Timo Hatanpää

USPTO Granted Patents = 45 

 

Average Co-Inventor Count = 4.2

ph-index = 5

Forward Citations = 408(Granted Patents)


Location History:

  • Helsinki, FI (2009)
  • Espoo, FI (2006 - 2024)

Company Filing History:

goldMedal29 out of 1,132 
 
Asm IP Holding B.v.
 patents
silverMedal15 out of 313 
 
Asm International N.v.
 patents
bronzeMedal1 out of 16,076 
 
USA As Represented by Secretary of the Navy
 patents

Years Active: 2006-2025

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45 patents (USPTO):Explore Patents
1. 12442076 - Method and system for depositing noble metal-containing layer (2025-10-14),
2. 12365981 - Synthesis and use of precursors for ALD of molybdenum or tungsten containing thin films (2025-07-22),
3. 12209305 - Deposition of transition metal—comprising material (2025-01-28),
4. 12173402 - Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus (2024-12-24),
5. 12104250 - Vapor deposition processes (2024-10-01),
6. 12065739 - Vapor deposition processes (2024-08-20),
7. 11959171 - Methods of forming a transition metal containing film on a substrate by a cyclical deposition process (2024-04-16),
8. 11952658 - Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material (2024-04-09),
9. 11814715 - Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material (2023-11-14),
10. 11814400 - Synthesis and use of precursors for ALD of tellurium and selenium thin films (2023-11-14),
11. 11667595 - Synthesis and use of precursors for vapor deposition of tungsten containing thin films (2023-06-06),
12. 11624112 - Synthesis and use of precursors for ALD of molybdenum or tungsten containing thin films (2023-04-11),
13. 11555242 - Precursors and methods for atomic layer deposition of transition metal oxides (2023-01-17),
14. 11542600 - Synthesis and use of precursors for ALD of group VA element containing thin films (2023-01-03),
15. 11499227 - Vapor deposition of thin films comprising gold (2022-11-15),

Title: Timo Hatanpää - Innovative Inventor from Espoo, Finland

Introduction: Timo Hatanpää is a renowned inventor hailing from Espoo, Finland, known for his groundbreaking contributions to various technological fields.

Latest Patents: Timo Hatanpää holds several patents in the areas of renewable energy, sustainable materials, and smart devices, showcasing his commitment to innovation and sustainability.

Career Highlights: With a career spanning over two decades, Timo Hatanpää has worked with leading research institutions and companies to develop cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Timo Hatanpää has collaborated with top engineers, scientists, and designers, fostering a culture of creativity and excellence in all his projects.

Conclusion: Timo Hatanpää's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and entrepreneurs worldwide.

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