Asm IP Holding B.v.

Asm International N.v.

USA As Represented by Secretary of the Navy

Timo Hatanpää

Mikko Ritala

Markku Leskelä

Viljami J Pore

Katja Väyrynen

Anton Vihervaara

Jaakko Niinisto

Suvi P Haukka

Miika Mattinen

Marko Vehkamaki

Tiina McKee

Maarit Mäkelä

Jani Hamalainen

Jani Holopainen

Marko Vehkamäki

Timo Hänninen

Raija H Matero

Antti H Rahtu

Joshua D Caldwell

Orest J Glembocki

Sharka M Prokes

Eero Santala

Maarit Kariemi

Mikko Rítala

The present disclosure relates to methods and apparatuses for depositing noble metal-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a noble metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form noble metal-containing material on the substrate. The noble metal precursor according to the disclosure comprises a noble metal halide compound comprising an organic phosphine adduct ligand.

Method and system for depositing noble metal-containing layer

Processes for forming Mo and W containing thin films, such as MoS, WS, MoSe, and WSethin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

Synthesis and use of precursors for ALD of molybdenum or tungsten containing thin films

The current disclosure relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to a method of forming a transition metal-comprising material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor comprising a transition metal compound in the reaction chamber, and providing a second precursor in the reaction chamber, wherein the transition metal compound comprises a transition metal halide bound to an adduct ligand, and the second precursor comprises a chalcogen or a pnictogen. The disclosure further relates to a method of forming a transition metal layer, and to semiconductor devices. Further, a vapor deposition assembly is disclosed.

Deposition of transition metal—comprising material

A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus

The present disclosure relates to methods for depositing an elemental metal or semimetal-containing material on a substrate by a cyclic deposition process, to an elemental metal or semimetal-containing layer, to a semiconductor structure and a device, and to deposition assemblies for depositing elemental metal or semimetal-containing material on a substrate. A method according to the current disclosure comprises providing a substrate in a reaction chamber, providing a metal or a semimetal precursor to the reaction chamber in a vapor phase, and providing a reducing agent into the reaction chamber in a vapor phase to form elemental metal or semimetal-containing material on the substrate. The reducing agent according to the method comprises a cyclohexadiene compound selected from compounds comprising a germanium-containing substituent.

Vapor deposition processes

The present disclosure relates to methods and apparatuses for depositing transition metal-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form transition metal-containing material on the substrate. The transition metal precursor according to the disclosure comprises a transition metal halide compound comprising an organic phosphine adduct ligand.

Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 μΩ-cm at a film thickness of less than 50 nanometers.

Methods of forming a transition metal containing film on a substrate by a cyclical deposition process

A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material

Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb&#x2014;Te, Ge&#x2014;Te, Ge&#x2014;Sb&#x2014;Te, Bi&#x2014;Te, and Zn&#x2014;Te thin films are provided. ALD processes are also provided for forming Se&#x2014;containing thin films, such as Sb&#x2014;Se, Ge&#x2014;Se, Ge&#x2014;Sb&#x2014;Se, Bi&#x2014;Se, and Zn&#x2014;Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiRRR)are preferably used, wherein R, R, and Rare alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

Synthesis and use of precursors for ALD of tellurium and selenium thin films

Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS, WN, WO, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

Synthesis and use of precursors for vapor deposition of tungsten containing thin films

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Precursors and methods for atomic layer deposition of transition metal oxides

Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb&#x2014;Te, Ge&#x2014;Sb and Ge&#x2014;Sb&#x2014;Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiRRR)are preferably used, wherein R, R, and Rare alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

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Espoo, Finland

Timo Hatanpää