Thomas Zimmer

Title: Thomas Zimmer: Innovator in Semiconductor Technology

Introduction

Thomas Zimmer is a prominent inventor based in Talence, France. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods involving graphene materials. With a total of 2 patents to his name, Zimmer continues to push the boundaries of what is possible in semiconductor manufacturing.

Latest Patents

Zimmer's latest patents include a method of manufacturing a semiconductor device that incorporates graphene material. This method involves providing a carrier wafer and a silicon carbide wafer, forming a first graphene material on one side of the silicon carbide wafer, and bonding it to the carrier wafer. The process also includes splitting the silicon carbide wafer into a thinner silicon carbide layer and a residual wafer, ensuring that the silicon carbide layer remains bonded to the carrier during the splitting process. Another notable patent is for a semiconductor device that features a graphene layer, which also outlines a method for its manufacturing. This method similarly involves bonding a silicon carbide wafer to a carrier wafer and forming a graphene material on the silicon carbide layer after splitting.

Career Highlights

Thomas Zimmer is currently employed at Infineon Technologies AG, where he applies his expertise in semiconductor technology. His work focuses on advancing the integration of graphene materials into semiconductor devices, which has the potential to enhance their performance and efficiency.

Collaborations

Zimmer collaborates with notable colleagues such as Guenther Ruhl and Hans-Joachim Schulze, contributing to a dynamic team that drives innovation in semiconductor technology.

Conclusion

Thomas Zimmer's contributions to the field of semiconductor technology, particularly through his innovative patents, highlight his role as a key inventor in the industry. His work continues to pave the way for advancements in semiconductor manufacturing.