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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10347723 B1

PDFFull Text
Date of Patent:
Jul. 09, 2019

Filed:

Nov. 13, 2018

Method of manufacturing a semiconductor device having graphene material

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Guenther Ruhl, Regensburg, DE;

Gunther Lippert, Frankfurt, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Thomas Zimmer, Talence, FR;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Cheung Lee

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/16 (2006.01); H01L 21/762 (2006.01); H01L 21/78 (2006.01); H01L 29/06 (2006.01); H01L 21/683 (2006.01); H01L 21/02 (2006.01); H01L 21/56 (2006.01); H01L 21/18 (2006.01); H01L 29/165 (2006.01); H01L 29/04 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 21/02447 (2013.01); H01L 21/02494 (2013.01); H01L 21/02527 (2013.01); H01L 21/02529 (2013.01); H01L 21/02587 (2013.01); H01L 21/02609 (2013.01); H01L 21/02612 (2013.01); H01L 21/02658 (2013.01); H01L 21/187 (2013.01); H01L 21/2007 (2013.01); H01L 21/26506 (2013.01); H01L 21/324 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 21/76251 (2013.01); H01L 21/76254 (2013.01); H01L 21/78 (2013.01); H01L 29/04 (2013.01); H01L 29/0657 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 21/02002 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68377 (2013.01); H01L 2221/68381 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; forming a first graphene material on a first side of the silicon carbide wafer; bonding the first side of the silicon carbide wafer with the first graphene material to the carrier wafer; and splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting.

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