The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Mar. 21, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Guenther Ruhl, Regensburg, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Thomas Zimmer, Talence, FR;
Gunther Lippert, Frankfurt, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/16 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/18 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 29/04 (2006.01); H01L 29/165 (2006.01); H01L 21/683 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 21/02447 (2013.01); H01L 21/02494 (2013.01); H01L 21/02527 (2013.01); H01L 21/02529 (2013.01); H01L 21/02587 (2013.01); H01L 21/02609 (2013.01); H01L 21/02612 (2013.01); H01L 21/02658 (2013.01); H01L 21/187 (2013.01); H01L 21/2007 (2013.01); H01L 21/26506 (2013.01); H01L 21/324 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 21/76251 (2013.01); H01L 21/76254 (2013.01); H01L 21/78 (2013.01); H01L 29/04 (2013.01); H01L 29/0657 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68377 (2013.01); H01L 2221/68381 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; bonding a first side of the silicon carbide wafer to the carrier wafer; splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting; and forming a graphene material on the silicon carbide layer.