Infineon Technologies Ag

Thomas Zimmer

Hans-Joachim Schulze

Guenther Ruhl

Gunther Lippert

A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; forming a first graphene material on a first side of the silicon carbide wafer; bonding the first side of the silicon carbide wafer with the first graphene material to the carrier wafer; and splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting.

Method of manufacturing a semiconductor device having graphene material

A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; bonding a first side of the silicon carbide wafer to the carrier wafer; splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting; and forming a graphene material on the silicon carbide layer.

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Talence, France

Thomas Zimmer