Company Filing History:

12 out of 27,375

Matsushita Electric Industrial Co., Ltd.

patents

2 out of 655

Matsushita Electronics Corporation

patents

Years Active: 1996-2007

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14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7307866 - Ferroelectric memory and method for reading data from the ferroelectric memory (2007-12-11),

2. 7280406 - Semiconductor memory device (2007-10-09),

3. 7184344 - Semiconductor device comprising a differential sense amplifier, a write column selection switch and a read column selection switch (2007-02-27),

4. 7136313 - Semiconductor storage device (2006-11-14),

5. 7106631 - Semiconductor device (2006-09-12),

6. 6888759 - Semiconductor device comprising a differential sense amplifier, a write column selection switch and a read column selection switch (2005-05-03),

7. 6067265 - Reference potential generator and a semiconductor memory device having (2000-05-23),

8. 5953277 - Reference potential generator and a semiconductor memory device having (1999-09-14),

9. 5828615 - Reference potential generator and a semiconductor memory device having (1998-10-27),

10. 5751650 - Electric signal supply circuit and semiconductor memory device (1998-05-12),

11. 5751628 - Ferroelectric memory devices and method for testing them (1998-05-12),

12. 5546342 - Semiconductor memory device including reverse and rewrite means (1996-08-13),

13. 5523974 - Semiconductor memory device with redundant memory cell backup (1996-06-04),

14. 5515312 - Semiconductor memory device (1996-05-07),

Title: Tetsuji Nakakuma: Innovator in Ferroelectric Memory Technology

Introduction

Tetsuji Nakakuma is a prominent inventor based in Shiga, Japan. He has made significant contributions to the field of semiconductor memory technology, holding a total of 14 patents. His work focuses on advancements in ferroelectric memory, which plays a crucial role in modern data storage solutions.

Latest Patents

Among his latest patents is a groundbreaking invention related to ferroelectric memory and a method for reading data from this memory. This innovative memory comprises a plurality of normal cells, each containing a first ferroelectric capacitor for data retention and a first transistor connected to the capacitor's first electrode. The design includes a first bit line, a precharge circuit, and a word line that ensures efficient data management. Another notable patent is for a semiconductor memory device that is compatible with SRAM, enabling high-speed data transfer while maintaining data reliability. This device activates memory access through an external chip enable signal, ensuring seamless data operations.

Career Highlights

Tetsuji Nakakuma has worked with notable companies such as Matsushita Electric Industrial Co., Ltd. and Matsushita Electronics Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor technologies and contribute to various innovative projects.

Collaborations

Throughout his career, Nakakuma has collaborated with esteemed colleagues, including Hiroshige Hirano and Nobuyuki Moriwaki. These partnerships have fostered a creative environment that has led to significant advancements in memory technology.

Conclusion

Tetsuji Nakakuma's contributions to ferroelectric memory technology and semiconductor devices have established him as a key figure in the field. His innovative patents and collaborations continue to influence the future of data storage solutions.

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