Taichung, Taiwan

Te-Wei Yeh


Average Co-Inventor Count = 4.8

ph-index = 1


Location History:

  • Taichung, TW (2023)
  • Kaohsiung, TW (2023 - 2024)

Company Filing History:


Years Active: 2023-2024

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8 patents (USPTO):Explore Patents

Title: Te-Wei Yeh: Innovator in Memory Technology

Introduction

Te-Wei Yeh is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 8 patents. His work focuses on advanced memory systems that enhance data storage and processing capabilities.

Latest Patents

One of his latest patents is for a magnetoresistive random access memory (MRAM). This innovative MRAM design includes a first transistor and a second transistor on a substrate, with a source line coupled to a first source/drain region of the first transistor. The first metal interconnection is extended to overlap both transistors, featuring a magnetic tunneling junction (MTJ) for improved performance. Another notable patent is for a resistor-transistor-logic circuit with GaN structures. This circuit includes a 2DEG resistor and a logic FET, designed to optimize the connection between input and output voltages.

Career Highlights

Te-Wei Yeh is currently employed at United Microelectronics Corporation, where he continues to push the boundaries of memory technology. His innovative designs have positioned him as a key player in the semiconductor industry.

Collaborations

Te-Wei has collaborated with several talented individuals, including Kuo-Hsing Lee and Sheng-Yuan Hsueh, who contribute to the advancement of technology in their respective fields.

Conclusion

Te-Wei Yeh's contributions to memory technology through his patents and collaborations highlight his role as an influential inventor. His work continues to shape the future of data storage solutions.

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