The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Aug. 02, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Kuo-Hsing Lee, Hsinchu County, TW;
Sheng-Yuan Hsueh, Tainan, TW;
Chun-Hsien Lin, Tainan, TW;
Yung-Chen Chiu, Taichung, TW;
Chien-Liang Wu, Tainan, TW;
Te-Wei Yeh, Taichung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A one-time programmable (OTP) memory cell includes a substrate having a first conductivity type and having an active area surrounded by an isolation region, a transistor disposed on the active area, and a capacitor disposed on the active area and electrically coupled to the transistor. The capacitor comprises a diffusion region of a second conductivity type in the substrate, a metallic film in direct contact with the active area, a capacitor dielectric layer on the metallic film, and a metal gate surrounded by the capacitor dielectric layer. The diffusion region and the metallic film constitute a capacitor bottom plate.