The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Mar. 08, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Kuo-Hsing Lee, Hsinchu County, TW;
Sheng-Yuan Hsueh, Tainan, TW;
Chien-Liang Wu, Tainan, TW;
Te-Wei Yeh, Kaohsiung, TW;
Yi-Chun Chen, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/306 (2006.01); H01L 21/765 (2006.01); H01L 21/8252 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0605 (2013.01); H01L 21/30621 (2013.01); H01L 21/765 (2013.01); H01L 21/8252 (2013.01); H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01);
Abstract
A resistor-transistor-logic circuit with GaN structures, including a 2DEG resistor having a drain connected with an operating voltage, and a logic FET having a gate connected to an input voltage, a source grounded and a drain connected with a source of the 2DEG resistor and connected collectively to an output voltage.