Gifu, Japan

Tatsuhiko Koide

This inventor holds 4 USPTO granted patents. Top assignee: Sanyo Electric Co., Ltd.. Active years: 2005-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tatsuhiko Koide. Retrieved from https://idiyas.com/inventor/tatsuhiko-koide-7wamfdvu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 75.0

Average Co-Inventor Count = 3.3

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Gifu, JP (2005)
  • Gifu-ken, JP (2006 - 2009)

Company Filing History:


Years Active: 2005-2009

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4 patents (USPTO):Explore Patents

Title: Innovations of Tatsuhiko Koide

Introduction

Tatsuhiko Koide is a prominent inventor based in Gifu-ken, Japan. He has made significant contributions to the field of semiconductor technology. With a total of 4 patents to his name, Koide's work has had a notable impact on the industry.

Latest Patents

One of his latest patents is a semiconductor device that features an emitter layer with a narrowed base contact portion. This innovative device includes a collector layer arranged on a semiconductor substrate, with a conductive layer positioned on the collector layer. A silicon film is placed on the conductive layer, and an emitter electrode is arranged on the silicon film. The design includes a first film that covers the side of the emitter electrode, ensuring optimal functionality. The silicon film consists of a first region that contacts the emitter electrode and a second region that differs from the first. The contact surface between these regions is strategically positioned to enhance performance.

Another significant patent is a manufacturing method for semiconductor devices. This method involves forming a conductive layer and a silicon film on a semiconductor substrate that includes an active region. The process includes creating an emitter electrode containing a first impurity on the silicon film, partially etching the silicon film using the emitter electrode as a mask, and forming an insulative film that covers the semiconductor substrate. The method also introduces a second impurity into the conductive layer and silicon film, allowing it to reach the active region and form an impurity region.

Career Highlights

Tatsuhiko Koide is currently employed at Sanyo Electric Co., Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and effective.

Collaborations

Throughout his career, Koide has collaborated with notable colleagues, including Daichi Suma and Yoshikazu Ibara. These collaborations have fostered a creative environment that has led to groundbreaking advancements in their field.

Conclusion

Tatsuhiko Koide's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative approaches continue to shape the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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