The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Sep. 29, 2005
Koichi Saito, Gifu-ken, JP;
Yoshikazu Ibara, Gifu-ken, JP;
Tatsuhiko Koide, Gifu-ken, JP;
Daichi Suma, Gifu-ken, JP;
Koichi Saito, Gifu-ken, JP;
Yoshikazu Ibara, Gifu-ken, JP;
Tatsuhiko Koide, Gifu-ken, JP;
Daichi Suma, Gifu-ken, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A high capacity semiconductor device having a narrowed emitter layer. The semiconductor device includes a collector layer formed on a semiconductor substrate. An SiGe alloy layer is formed on the collector layer. A silicon film is formed on the SiGe layer. An emitter electrode is formed on the silicon film. A side wall film covers the side surface of the emitter electrode. The bottom surface of the emitter electrode is located above the lower surface of the side wall film. Part of the second region of the silicon film is located between the SiGe alloy layer and the side wall film. An impurity region is formed adjacent to the conductive layer. A silicide film is formed along the side surface of the second region, the side surface of the conductive layer, and the surface of the impurity region.