Location History:
- Gifu-ken, JP (2006)
- Gunma-ken, JP (2008)
- Gunma, JP (2010)
Company Filing History:
Years Active: 2006-2010
Title: Daichi Suma: Innovator in Semiconductor Technology
Introduction
Daichi Suma is a notable inventor based in Gunma-ken, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the efficiency and performance of semiconductor devices.
Latest Patents
One of Daichi Suma's latest patents is for an insulated gate semiconductor device and method for manufacturing the same. This invention addresses the issue of increased resistance in insulated gate semiconductor elements by forming a p-type well region through a unique stacking method of p-type impurity regions. This innovation ensures a more uniform impurity concentration, which is crucial for maintaining desired breakdown voltages.
Another significant patent involves a manufacturing method for semiconductor devices. This method includes several steps, such as forming a conductive layer and a silicon film on a semiconductor substrate, and introducing impurities to create specific regions within the silicon film. This process enhances the functionality and reliability of semiconductor devices.
Career Highlights
Throughout his career, Daichi Suma has worked with prominent companies, including Sanyo Electric Co., Ltd. and Sanyo Semiconductor Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.
Collaborations
Daichi Suma has collaborated with notable colleagues in the field, including Yoshikazu Ibara and Tatsuhiko Koide. These partnerships have contributed to the advancement of semiconductor technologies and have fostered a collaborative environment for innovation.
Conclusion
Daichi Suma's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry, paving the way for future advancements in semiconductor devices.