The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Nov. 09, 2006
Daichi Suma, Gunma-ken, JP;
Yoshikazu Ibara, Gifu-ken, JP;
Tatsuhiko Koide, Gifu-ken, JP;
Koichi Saito, Gifu-ken, JP;
Daichi Suma, Gunma-ken, JP;
Yoshikazu Ibara, Gifu-ken, JP;
Tatsuhiko Koide, Gifu-ken, JP;
Koichi Saito, Gifu-ken, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A semiconductor device manufacturing method including forming a conductive layer and a silicon film on a semiconductor substrate including an active region, forming an emitter electrode containing a first impurity on the silicon film above the active region, partially etching the silicon film using the emitter electrode as a mask, forming an insulative film covering the semiconductor substrate and a side wall film covering a side surface of the emitter electrode, introducing a second impurity into the conductive layer and silicon film so that the second impurity reaches the active region to form an impurity region containing the second impurity in parts of the conductive layer and silicon film, and diffusing the first impurity contained in the emitter electrode into the silicon film to form in the silicon film a first region containing the first impurity and a second region free of the first impurity.