Sanyo Electric Co., Ltd.

Tatsuhiko Koide

Koichi Saito

Yoshikazu Ibara

Daichi Suma

Naoteru Matsubara

Mitsuru Okigawa

Kazuhiro Sasada

Makoto Izumi

Shuji Fujiwara

A semiconductor device provided with an emitter layer having a narrowed base contact portion. The semiconductor device includes a collector layer arranged on a semiconductor substrate. A conductive layer is arranged on the collector layer. A silicon film is arranged on the conductive layer. An emitter electrode is arranged on the silicon film. A first film covers the side of the emitter electrode. The silicon film includes a first region contacting the emitter electrode and a second region differing from the first region. A contact surface between the first region and the emitter electrode is located at a level that is higher than that of the lower surface of the first film. At least part of the second region of the silicon film is located between the conductive layer and the first film and is in contact with the conductive layer and the first film.

Semiconductor device

A semiconductor device manufacturing method including forming a conductive layer and a silicon film on a semiconductor substrate including an active region, forming an emitter electrode containing a first impurity on the silicon film above the active region, partially etching the silicon film using the emitter electrode as a mask, forming an insulative film covering the semiconductor substrate and a side wall film covering a side surface of the emitter electrode, introducing a second impurity into the conductive layer and silicon film so that the second impurity reaches the active region to form an impurity region containing the second impurity in parts of the conductive layer and silicon film, and diffusing the first impurity contained in the emitter electrode into the silicon film to form in the silicon film a first region containing the first impurity and a second region free of the first impurity.

Manufacturing method for semiconductor device

A high capacity semiconductor device having a narrowed emitter layer. The semiconductor device includes a collector layer formed on a semiconductor substrate. An SiGe alloy layer is formed on the collector layer. A silicon film is formed on the SiGe layer. An emitter electrode is formed on the silicon film. A side wall film covers the side surface of the emitter electrode. The bottom surface of the emitter electrode is located above the lower surface of the side wall film. Part of the second region of the silicon film is located between the SiGe alloy layer and the side wall film. An impurity region is formed adjacent to the conductive layer. A silicide film is formed along the side surface of the second region, the side surface of the conductive layer, and the surface of the impurity region.

A solid state image device capable of attaining high condensability also when integrating an optical lens and a solid state image sensor with each other is provided. This solid state image device comprises an optical lens, a solid state image sensor including a microlens, and a resin layer formed between the optical lens and the microlens of the solid state image sensor. Thus, the solid state image device can refract light incident upon the microlens from the resin layer also when the resin layer is formed between the solid state image sensor and the optical lens.

Growing community of inventors

Gifu-ken, Japan

Tatsuhiko Koide