Tokyo, Japan

Takio Ohno


Average Co-Inventor Count = 2.2

ph-index = 4

Forward Citations = 74(Granted Patents)


Location History:

  • Hyogo, JP (1997 - 1998)
  • Tokyo, JP (1999 - 2008)

Company Filing History:


Years Active: 1997-2008

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7 patents (USPTO):Explore Patents

Title: Takio Ohno: Innovator in Semiconductor Technology

Introduction

Takio Ohno is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His innovative work has led to advancements that improve the efficiency and reliability of semiconductor devices.

Latest Patents

One of Takio Ohno's latest patents focuses on the capture of residual refractory metal within semiconductor devices. This invention provides a configuration in which a dummy silicide area is strategically placed near a non-silicide area. This design effectively captures residual refractory metals, resulting in improved yield by preventing the trapping of these metals into non-silicide areas. Consequently, this innovation reduces junction leakage within the non-silicide area, enhancing the overall performance of semiconductor devices.

Career Highlights

Throughout his career, Takio Ohno has worked with notable companies such as Mitsubishi Denki Kabushiki Kaisha and Renesas Technology Corporation. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology, contributing to his success as an inventor.

Collaborations

Takio Ohno has collaborated with esteemed colleagues in the field, including Masatoshi Kimura and Takeshi Kamino. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Takio Ohno's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.

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