The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Oct. 23, 2001
Applicants:
Takeshi Kamino, Tokyo, JP;
Toshiaki Tsutsumi, Tokyo, JP;
Shuji Kodama, Tokyo, JP;
Takio Ohno, Tokyo, JP;
Inventors:
Takeshi Kamino, Tokyo, JP;
Toshiaki Tsutsumi, Tokyo, JP;
Shuji Kodama, Tokyo, JP;
Takio Ohno, Tokyo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
There is provided a semiconductor device with a configuration in which a dummy silicide areais provided in the vicinity of a non-silicide areato easily capture residual refractory metals, resulting in an improved yield by preventing the trapping of residual refractory metals into a non-silicide area and thereby reducing a junction leakage within the non-silicide area.