The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 1997
Filed:
Sep. 01, 1995
Takio Ohno, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A p-type silicon substrate is provided at its main surface with n-type impurity regions with a space between each other. A gate electrode is formed on a region between the n-type impurity regions with a gate insulating film therebetween. A titanium silicide layer is formed in a region extending from a surface layer of the gate electrode to a surface layer of the n-type impurity region. The titanium silicide layer forms a local interconnection. A side wall insulating film remains on a side wall of the gate electrode on which the titanium silicide layer is not formed. Thereby, the semiconductor device can have a local interconnection which has high reliability and can be formed easily.