Takeshi Okazawa

This inventor holds 27 USPTO granted patents, primarily in Magnetic Memory Technology. Top assignees: Nec Corporation, Nec Electronics Corporation. Active years: 1986-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takeshi Okazawa. Retrieved from https://idiyas.com/inventor/takeshi-okazawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27

% Patents Active = 88.9

Average Co-Inventor Count = 1.3

ph-index = 14

Forward Citations = 600(Granted Patents)

Location History:

Tokyo, JP (1986 - 2005)
Kanagawa, JP (2004 - 2008)

Company Filing History:

Nec Electronics Corporation

patents

Years Active: 1986-2008

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Areas of Expertise:

Magnetic Memory

MRAM

Nonvolatile Storage

Data Writing

Memory Device

Fabrication Method

Tunnel Magnetoresistance

Semiconductor Device

Transistor Cells

Data Erasing

Memory Cell Array

Integrated Circuit

27 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7405958 - Magnetic memory device having XP cell and Str cell in one chip (2008-07-29),

2. 7009876 - MRAM and data writing method therefor (2006-03-07),

3. 6939722 - Method of forming magnetic memory (2005-09-06),

4. 6834018 - Nonvolatile memory device having data read operation with using reference cell and method thereof (2004-12-21),

5. 6812537 - Magnetic memory and method of operation thereof (2004-11-02),

6. 6746875 - Magnetic memory and method of its manufacture (2004-06-08),

7. 6703249 - Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect (2004-03-09),

8. 6674663 - Nonvolatile storage device and operating method thereof (2004-01-06),

9. 6643168 - Nonvolatile magnetic storage device (2003-11-04),

10. 6532163 - Non-volatile semiconductor memory device with magnetic memory cell array (2003-03-11),

11. 6477077 - Non-volatile memory device (2002-11-05),

12. 5973355 - Nonvolatile semiconductor memory device and manufacturing method of the (1999-10-26),

13. 5972750 - Nonvolatile semiconductor memory device and manufacturing method of the (1999-10-26),

14. 5787036 - Flash memory including improved transistor cells and a method of (1998-07-28),

15. 5675163 - Non-volatile semiconductor memory device with thin insulation layer (1997-10-07),

Title: Innovations of Takeshi Okazawa: Pioneering Advances in Memory Technology

Introduction

Takeshi Okazawa, based in Tokyo, Japan, is an esteemed inventor with a remarkable portfolio of 27 patents, primarily in the field of memory technology. His groundbreaking work has contributed significantly to the advancement of semiconductor memory devices, reflecting his commitment to innovation and excellence.

Latest Patents

Okazawa's latest patents include notable inventions such as a "Magnetic memory device having XP cell and Str cell in one chip." This innovative semiconductor memory device comprises an XP type MRAM cell array and an STr type MRAM cell array integrated into a single chip. The layered structure allows the STr type MRAM cell array to function as a work memory area, while the XP type serves as the data storage area. The ability to connect cells from both arrays to the same bit-line facilitates efficient data writing.

Additionally, he has developed the patent titled "MRAM and data writing method therefor," which focuses on an MRAM system with main and sub-structures. This invention introduces a novel approach to data writing that utilizes a substrate current, rather than a channel current, through selecting transistors driving a snap back phenomenon. This method enhances the writing process by discharging the charge stored in the corresponding main and sub-word lines, ensuring greater efficiency in memory operations.

Career Highlights

Throughout his career, Okazawa has made significant contributions to leading technology companies, including NEC Corporation and NEC Electronics Corporation. His work at these organizations has positioned him as a key figure in memory technology innovation.

Collaborations

In his journey, Okazawa has collaborated with other notable professionals such as Hiroki Shirai and Taishi Kubota. Working alongside these talented individuals has fostered a creative environment that inspires further breakthroughs in the field of semiconductor memory.

Conclusion

Takeshi Okazawa's contributions to the memory technology sector reflect his ingenuity and determination as an inventor. With 27 patents to his name, his latest innovations continue to pave the way for advancements in semiconductor technology, ensuring that he remains at the forefront of innovation in the industry.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]