The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1998
Filed:
Dec. 12, 1996
Takeshi Okazawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A flash memory includes a plurality of MOSFETs. Each of the MOSFETs comprises a first conductive type substrate, a source, and a drain. The source and the drain are formed on one major surface of the substrate. A floating gate is situated over the major surface via a first insulation layer in a manner to control a current flowing through a channel between the source and the drain. The floating gate is highly resistive so as to essentially hold electrons in the region into which they were are injected from a depletion layer formed in the channel. A control gate is further provided over the floating gate via a second insulation layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile