The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2004
Filed:
Apr. 18, 2002
Applicant:
Inventors:
Takeshi Okazawa, Tokyo, JP;
Hideaki Numata, Tokyo, JP;
Assignee:
NEC Electronics Corporation, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A method of manufacturing a magnetic random access memory for excluding stress-induced defects in memory cells. The method is composed of forming a first magnetic film over a substrate, forming a tunnel insulating film on the first magnetic film such that the tunnel insulating film has a curvature, forming a second magnetic film on the tunnel insulating film, and etching the first magnetic film, the tunnel insulating film and the second magnetic film to form a memory cell. The etching is executed such that the curvature is excluded from the memory cell.