Location History:
- Tokyo, JP (1991)
- Kawasaki, JP (1995)
- Chigasaki, JP (2002)
- Yokohama, JP (2002)
- Kanagawa-ken, JP (2003)
Company Filing History:
Years Active: 1991-2003
Title: Takeo Nakayama: Innovator in Semiconductor Technology
Introduction
Takeo Nakayama is a prominent inventor based in Kanagawa-ken, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work has been instrumental in advancing the manufacturing processes of semiconductor devices.
Latest Patents
Among his latest patents, Nakayama has developed a semiconductor wafer and a method of manufacturing the same. He has also created a process for fabricating an aligned LDD transistor. This innovative process involves forming a shallow impurity diffusion layer adjacent to a gate electrode by utilizing a side-wall insulating film of the gate electrode twice. The resulting MOS transistor of the salicide type demonstrates improved short-channel effects. The method includes self-alignment techniques to ensure precision in forming impurity diffusion layers, enhancing the overall performance of semiconductor devices.
Career Highlights
Nakayama is currently associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to collaborate with other talented engineers and researchers, furthering the development of cutting-edge semiconductor technologies.
Collaborations
Some of Nakayama's notable coworkers include Akira Hokazono and Takeo Maeda. Their collective expertise has contributed to the success of various projects within the company.
Conclusion
Takeo Nakayama's innovative contributions to semiconductor technology have established him as a key figure in the industry. His patents reflect a commitment to advancing manufacturing processes and improving device performance.