The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 1991
Filed:
Jan. 05, 1989
Applicant:
Inventor:
Takeo Nakayama, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 71 ; 357 68 ; 357 65 ;
Abstract
A semiconductor device comprises a semiconductor substrate having a diffused region and an element region, and the diffused region and the element region overlap at least partially. An insulating layer having a contact hole is provided at the surface of the substrate. A wiring layer crosses over the contact hole to form at least four crossing points with respect to the contact hole. The crossing points over the element region correspond to the overlap between the diffused region and the element region.