The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 1995
Filed:
Sep. 04, 1992
Applicant:
Inventor:
Takeo Nakayama, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; G11C / ;
U.S. Cl.
CPC ...
257385 ; 257413 ; 257904 ; 365154 ;
Abstract
A MOSFET constituting a flip-flop circuit and a MOSFET for control of reading and writing data out of and into a memory cell are formed on a semiconductor. The gate electrode of the first MOSFET and the gate electrode of the second MOSFET are formed by layers of different levels. The gate electrodes have an overlapped portion R. The first and second MOSFETs are arranged symmetrically with respect to a certain point P. By virtue of the above structure, the degree of integration of a static RAM is enhanced.