The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Nov. 19, 1998
Applicant:
Inventor:
Takeo Nakayama, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/900 ;
Abstract
Dummy patterns are formed in signal patterns of a first metal layer, an insulating film covering such patterns is flattened by CMP, and only dummy patterns are selectively etched by anisotropic etching through holes opened at specific intervals. Then the opened holes are filled with an insulating film, and cavities are formed. In the upper part of the cavity, a signal line of the second metal layer is formed. As a result, a semiconductor device is provided by the CMP flattening technology without being accompanied by increase of parasitic capacity between signal lines by metal dummy patterns or shorting due to dust and the like.