Takehisa Yamaguchi

This inventor holds 17 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 1992-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takehisa Yamaguchi. Retrieved from https://idiyas.com/inventor/takehisa-yamaguchi-arfrhmw0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 17

% Patents Active = 100.0

Average Co-Inventor Count = 2.5

ph-index = 6

Forward Citations = 117(Granted Patents)

Location History:

Itami, JP (1994)
Hyogo, JP (1992 - 2002)

Company Filing History:

17 out of 21,351

Mitsubishi Denki Kabushiki Kaisha

patents

Years Active: 1992-2002

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Areas of Expertise:

Semiconductor Device

Memory Technology

Transistor Structures

Fabrication Methods

Nitrogen Implantation

Trench Isolation

Dynamic Random Access Memory

Field Effect Transistor

Access Transistor

Manufacturing Apparatus

Gate Insulating Layer

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6380036 - Semiconductor device and method of manufacturing the same (2002-04-30),

2. 6153910 - Semiconductor device with nitrogen implanted channel region (2000-11-28),

3. 5837606 - Semiconductor device having internal wire and method of fabricating the (1998-11-17),

4. 5683923 - Semiconductor memory device capable of electrically erasing and writing (1997-11-04),

5. 5598019 - Semiconductor device having trench isolation structure and method of (1997-01-28),

6. 5557129 - Semiconductor MOSFET device having a shallow nitrogen implanted channel (1996-09-17),

7. 5550409 - Semiconductor device having internal wire and method of fabricating the (1996-08-27),

8. 5488245 - Semiconductor memory device capable of electrically erasing and writing (1996-01-30),

9. 5428235 - Semiconductor memory device including improved connection structure to (1995-06-27),

10. 5347151 - DRAM with memory cells having access transistor formed on solid phase (1994-09-13),

11. 5275960 - Method of manufacturing MIS type FET semiconductor device with gate (1994-01-04),

12. 5275629 - Semiconductor device manufacturing apparatus (1994-01-04),

13. 5270242 - Method for fabricatins dynamic random access memory device having a (1993-12-14),

14. 5231038 - Method of producing field effect transistor (1993-07-27),

15. 5218217 - Dynamic random access memory device and method of manufacturing (1993-06-08),

Title: Takehisa Yamaguchi: Innovator in Semiconductor Technology

Introduction

Takehisa Yamaguchi is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work focuses on the development of advanced semiconductor devices that enhance performance and miniaturization.

Latest Patents

Yamaguchi's latest patents include innovative designs for semiconductor devices and methods of manufacturing them. One notable patent describes a semiconductor device where a boron diffusion region is formed at the surface of a silicon substrate. This design features a pair of n-type source/drain regions and a gate electrode positioned between them, with a gate insulating film in place. Additionally, a nitrogen implanted region is created at the surface of the silicon substrate, which has a peak nitrogen concentration at a depth not exceeding 500 angstroms from the surface. This configuration allows for the creation of a transistor structure that can be easily miniaturized. Another patent focuses on a semiconductor device with a nitrogen implanted channel region, emphasizing similar structural features that facilitate miniaturization.

Career Highlights

Yamaguchi is associated with Mitsubishi Electric Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of modern electronic devices.

Collaborations

Yamaguchi has collaborated with notable colleagues, including Masahiro Shimizu and Hidekazu Oda. Their combined expertise has contributed to the successful development of innovative semiconductor solutions.

Conclusion

Takehisa Yamaguchi's contributions to semiconductor technology have established him as a key figure in the field. His patents reflect a commitment to innovation and the advancement of electronic devices. His work continues to influence the future of semiconductor design and manufacturing.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]