The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1993
Filed:
May. 27, 1992
Takehisa Yamaguchi, Hyogo, JP;
Masahiro Shimizu, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A field effect transistor including a gate electrode, a source electrode and a drain electrode which are formed on a major surface of a silicon substrate. An impurity contained in the source electrode and the drain electrode is diffused into the silicon substrate by heat treatment of thereby form source and drain areas of the transistor. The source electrode and the drain electrode are electrically insulated from the gate electrode by a side-wall insulating film. The side-wall insulating film and the gate insulating film are formed by separate steps, so can each be formed in optimum thickness.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile