The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 1997
Filed:
Apr. 06, 1994
Shigeki Komori, Hyogo, JP;
Takehisa Yamaguchi, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A trench for element isolation is formed on the main surface of a semiconductor substrate. A conductive layer is formed in the trench, electrically connected to the semiconductor substrate. Oxide films and a dielectric film is formed between the conductive layer and the sidewall of the trench. A field oxide film is formed on the conductive layer. The dielectric film extends from the sidewall of the field oxide film to a region between the sidewall of the trench and the conductive layer. Consequently, a semiconductor device having an element isolation structure of superior isolation capability and high reliability can be obtained.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile