Takayuki Shingyoji

Title: Takayuki Shingyoji: Silicon Wafer and Crystal Processing Innovations.

Introduction

Takayuki Shingyoji is an inventor based in Saitama, Japan, whose patent work focuses on silicon single-crystal layers and silicon wafer production. He is associated with Sumitomo Mitsubishi Silicon Corporation and is listed as an inventor on 2 patents.

Latest Patents

Shingyoji’s listed patents address thermal processing methods intended to improve silicon materials and wafer quality.

“Process for Producing Silicon Single Crystal Layer and Silicon Single Crystal Layer” describes thermally processing a silicon wafer in hydrogen, an inert gas, or a mixture of those gases. The process operates at temperatures from 600°C to 950°C, with the upper limit not exceeding 950°C, to improve the surface quality of the silicon single-crystal layer.

“Silicon Wafer Production Process and Silicon Wafer” describes cutting a wafer from a silicon single-crystal ingot in a region selected for its defect characteristics, including a perfect region free of specified point-defect agglomerates or a region associated with ring-shaped oxidation-induced stacking faults. The wafer is then rapidly thermally annealed in hydrogen, argon, or a mixture of those gases.

Career Highlights

The available patent information highlights Shingyoji’s contributions to silicon processing, particularly thermal treatment and wafer production. His work addresses methods for improving surface quality and selecting and processing silicon wafers based on characteristics of the source crystal.

Collaborations

Shingyoji’s listed coworkers include Takashi Shibayama and Yoshio Murakami. His association with Sumitomo Mitsubishi Silicon Corporation places his patent work within the company’s silicon technology activities.

Conclusion

Takayuki Shingyoji’s patents focus on practical processes for producing and treating silicon single-crystal layers and wafers, with an emphasis on material quality and defect-aware manufacturing.