The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Aug. 06, 2004
Applicants:
Takashi Shibayama, Kishima-gun, JP;
Yoshio Murakami, Saitama, JP;
Takayuki Shingyoji, Saitama, JP;
Inventors:
Assignee:
Sumitomo Mitsubishi Silicon Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/12 (2006.01); C30B 25/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
This silicon wafer production process has a step of cutting a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P free of agglomerates of interstitial-silicon-type point defects and agglomerates of vacancy-type point defects and/or a region R in which there is occurrence of ring-shaped oxidation induced stacking faults, and a step of performing rapid thermal annealing on the silicon wafer in a hydrogen atmosphere, an argon atmosphere or an atmosphere containing a mixed gas thereof.