Sumitomo Mitsubishi Silicon Corporation

Takayuki Shingyoji

Yoshio Murakami

Takashi Shibayama

A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600&#xb0; C. to 950&#xb0; C. (here, the temperature should not be greater than 950&#xb0; C.). By doing this, a quality of a surface of the silicon single-crystal layer is improved.

Process for producing silicon single crystal layer and silicon single crystal layer

This silicon wafer production process has a step of cutting a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P free of agglomerates of interstitial-silicon-type point defects and agglomerates of vacancy-type point defects and/or a region R in which there is occurrence of ring-shaped oxidation induced stacking faults, and a step of performing rapid thermal annealing on the silicon wafer in a hydrogen atmosphere, an argon atmosphere or an atmosphere containing a mixed gas thereof.

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Saitama, Japan

Takayuki Shingyoji