The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
Mar. 05, 2003
Applicants:
Takashi Shibayama, Kishima-gun, JP;
Yoshio Murakami, Saitama, JP;
Takayuki Shingyoji, Saitama, JP;
Inventors:
Assignee:
Sumitomo Mitsubishi Silicon Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600° C. to 950° C. (here, the temperature should not be greater than 950° C.). By doing this, a quality of a surface of the silicon single-crystal layer is improved.