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For the Inventor, By the Inventor

Tokyo, Japan

Takayuki Gomi

This inventor holds 29 USPTO granted patents, primarily in Bipolar Transistor Technology. Top assignee: Sony Corporation. Active years: 1991-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takayuki Gomi. Retrieved from https://idiyas.com/inventor/takayuki-gomi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29

% Patents Active = 100.0

Average Co-Inventor Count = 1.8

ph-index = 9

Forward Citations = 273(Granted Patents)


Location History:

  • Kanagawa, JP (1996 - 1998)
  • Toyko, JP (2001)
  • Tokyo, JP (1991 - 2005)

Company Filing History:

goldMedal29 out of 58,145 
 
Sony Corporation
 patents

Years Active: 1991-2005

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Areas of Expertise:
Bipolar Transistor
Heterojunction
Integrated Injection Logic
SOI Transistor
High Voltage Transistors
High Speed Transistors
Semiconductor Device
Fabrication Process
Mesa Bipolar Transistor
Stacked Semiconductor Device
Si-Ge Base
BiCMOS Devices
29 patents (USPTO):Explore Patents
1. 6977426 - Semiconductor device including high speed transistors and high voltage transistors disposed on a single substrate (2005-12-20),
2. 6596600 - Integrated injection logic semiconductor device and method of fabricating the same (2003-07-22),
3. 6222250 - Bipolar transistor device and method for manufacturing the same (2001-04-24),
4. 6034402 - Semiconductor device (2000-03-07),
5. 6008524 - Integrated injection logic semiconductor device (1999-12-28),
6. 5976940 - Method of making plurality of bipolar transistors (1999-11-02),
7. 5915186 - Method of manufacturing heterojunction bipolar device having Si.sub.1-x (1999-06-22),
8. 5912479 - Heterojunction bipolar semiconductor device (1999-06-15),
9. 5893743 - Process of fabricating semiconductor device (1999-04-13),
10. 5885880 - Bipolar transistor device and method for manufacturing the same (1999-03-23),
11. 5861640 - Mesa bipolar transistor with sub base layer (1999-01-19),
12. 5858850 - Process of fabricating integrated heterojunction bipolar device and MIS (1999-01-12),
13. 5856228 - Manufacturing method for making bipolar device having double polysilicon (1999-01-05),
14. 5846867 - Method of producing Si-Ge base heterojunction bipolar device (1998-12-08),
15. 5830799 - Method for forming embedded diffusion layers using an alignment mark (1998-11-03),

Title: Spotlight on Inventor Takayuki Gomi

Introduction:

Takayuki Gomi is a prolific inventor based in Tokyo, Japan, known for his remarkable contributions to the field of semiconductor technology. With an impressive portfolio of 29 patents, Gomi has been instrumental in advancing the capabilities of semiconductor devices for various applications.

Latest Patents:

1. "Semiconductor device including high speed transistors and high voltage transistors disposed on a single substrate": This patent showcases Gomi's expertise in developing semiconductor devices with high speed and high voltage transistors on a single substrate, enabling enhanced performance and versatility.

2. "Integrated Injection Logic semiconductor device and method of fabricating the same": Gomi's innovative approach towards forming logic circuits with consistent switching speeds across multi-collector structures demonstrates his ingenuity in semiconductor device fabrication.

Career Highlights:

Currently affiliated with Sony Corporation, Takayuki Gomi has honed his skills and expertise in semiconductor technology through his tenure at this renowned tech company. His inventive spirit and dedication to pushing the boundaries of semiconductor design make him a valued asset in the industry.

Collaborations:

Gomi has had the privilege of working alongside esteemed colleagues such as Hiroyuki Miwa and Katsuyuki Kato. The collaborative efforts of these talented individuals have led to the successful development and implementation of groundbreaking semiconductor technologies.

Conclusion:

Inventor Takayuki Gomi's relentless pursuit of innovation and excellence in the semiconductor domain has solidified his reputation as a trailblazer in the field. His patents and collaborative endeavors stand as a testament to his commitment to driving technological advancements that shape the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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