The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1999
Filed:
Aug. 12, 1997
Takayuki Gomi, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
A process of fabricating a semiconductor device includes the steps of: forming a base layer of a bipolar transistor (NPN bipolar transistor) on a semiconductor base body by selective epitaxial growth; and forming a dielectric film of a MIS capacitor on the same semiconductor base body. In this process, when side walls for isolating a base electrode connected to the base layer from an emitter layer formed on the base layer are formed, the dielectric film is formed of a silicon nitride film which is the same as one of films constituting the side walls. Thus, a MIS capacitor can be thus formed on one substrate together with a bipolar transistor only by adding the minimum number of steps to the steps of forming the bipolar transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile