The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 1999
Filed:
Jun. 17, 1997
Takayuki Gomi, Tokyo, JP;
Hiroaki Ammo, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A process for forming a first bipolar transistor having a single polysilicon structure and a second bipolar transistor having a single polysilicon structure and being of a conducting type opposite to that of the first bipolar transistor on the same substrate. In the process of fabricating a semiconductor device in which a first bipolar transistor having a single polysilicon structure, a second bipolar transistor having a single polysilicon structure and being of a conducting type opposite to that of the first bipolar transistor, and a third bipolar transistor having a double polysilicon structure are provided on the same semiconductor substrate, a base contact portion of the first bipolar transistor and an emitter of the second bipolar transistor are formed in the same step, and an emitter of the first bipolar transistor and base contact portions of the second and third bipolar transistors are formed in the same step.