The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1999
Filed:
Jul. 25, 1997
Hideki Mori, Kanagawa, JP;
Takayuki Gomi, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a heterojunction bipolar transistor and a junction gate type field effect transistor which are formed on a semiconductor base. A base region and graft base regions of the heterojunction bipolar transistor, and a channel region and source/drain regions of the junction gate type field effect transistor, are formed of a first semiconductor layer of a first conduction type. The first semiconductor layer is formed of mixed crystals of silicon-germanium which has a higher carrier mobility than silicon. An emitter region of the heterojunction bipolar transistor and a gate region of the junction gate type field effect transistor are formed of a second semiconductor layer of a second conduction type which makes a heterojunction with the first semiconductor layer.