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For the Inventor, By the Inventor

Tsuchiura, Japan

Takashi Inui

This inventor holds 15 USPTO granted patents. Top assignees: Texas Instruments Corporation, Nippon Sanso Corporation, Hitachi, Ltd.. Active years: 1989-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takashi Inui. Retrieved from https://idiyas.com/inventor/takashi-inui-4832wc1k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 171(Granted Patents)


Location History:

  • Miho, JP (1989 - 1991)
  • Dallas, TX (US) (1992)
  • Tsuchiura, JP (1995 - 1997)
  • Tshuchiura, JP (1996 - 1997)
  • Tokyo, JP (1999 - 2000)
  • Kitakoma-gun, JP (1999 - 2002)

Company Filing History:

goldMedal11 out of 29,922 
 
Texas Instruments Corporation
 patents
silverMedal4 out of 182 
 
Nippon Sanso Corporation
 patents
bronzeMedal3 out of 42,743 
 
Hitachi, Ltd.
 patents
where one patent can have more than one assignee

Years Active: 1989-2002

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15 patents (USPTO):Explore Patents
1. 6475461 - Porous carbonaceous material, manufacturing method therefor and use thereof (2002-11-05),
2. 6115282 - Dynamic memory (2000-09-05),
3. 6013208 - Manufacturing method for carbon material for electrical double layer (2000-01-11),
4. 5995431 - Bit line precharge circuit with reduced standby current (1999-11-30),
5. 5985489 - Carbon for a lithium secondary battery, lithium secondary battery, and (1999-11-16),
6. 5972834 - Carbon adsorbent, manufacturing method therefor, gas separation method (1999-10-26),
7. 5703499 - Address bit latching input circuit (1997-12-30),
8. 5615156 - Semiconductor memory device having plural memory mats with centrally (1997-03-25),
9. 5574693 - Semiconductor memory device (1996-11-12),
10. 5557580 - Word line driving circuit (1996-09-17),
11. 5497349 - Dynamic random access memory device having first and second I/O line (1996-03-05),
12. 5455796 - Semiconductor memory device (1995-10-03),
13. 5103113 - Driving circuit for providing a voltage boasted over the power supply (1992-04-07),
14. 5055717 - Data selector circuit and method of selecting format of data output from (1991-10-08),
15. 4808857 - Sense amplifier circuit for switching plural inputs at low power (1989-02-28),

Title: Takashi Inui: Innovator in Carbonaceous Materials and Dynamic Memory

Introduction

Takashi Inui is a prominent inventor based in Tsuchiura, Japan. He has made significant contributions to the fields of materials science and memory technology. With a total of 15 patents to his name, Inui's work has had a substantial impact on various industries.

Latest Patents

One of Inui's latest patents involves a porous carbonaceous material and its manufacturing method. This innovation includes a halogen treatment process that enhances the yield of the porous carbonaceous material. The process consists of a halogenation step, where carbonized charcoal is treated with halogen, followed by a dehalogenation step to eliminate halogen atoms. The resulting material exhibits a high capacity for adsorbing nitrogen, oxygen, carbon dioxide, and methane. When utilized as an electrical double layer capacitor carbon, it demonstrates increased electrostatic capacity compared to conventional materials. Another notable patent focuses on a type of dynamic memory designed to maintain data integrity even in the presence of noise on the RAS signal.

Career Highlights

Throughout his career, Inui has worked with notable companies such as Texas Instruments Corporation and Nippon Sanso Corporation. His experience in these organizations has contributed to his expertise in developing innovative technologies.

Collaborations

Inui has collaborated with talented individuals in his field, including Takushi Ohsaki and Akihiro Nakamura. These partnerships have fostered a creative environment that has led to groundbreaking advancements in his research.

Conclusion

Takashi Inui's contributions to the fields of carbonaceous materials and dynamic memory exemplify his innovative spirit and dedication to advancing technology. His patents reflect a commitment to enhancing performance and efficiency in various applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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