The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 1997
Filed:
Apr. 10, 1996
Koichi Abe, Tokyo-to, JP;
Takashi Inui, Tsuchiura, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An input circuit for a memory address bit operates at high operating speed. A PMOS transistor 112 is provided between a supply line for 1/2V.sub.CC and a node N11. When not in operation, node N11 of input portion 11A is precharged not to the power supply voltage V.sub.CC, but to 1/2V.sub.CC, a potential halfway between the power supply voltage V.sub.CC and 0 V. Another PMOS transistor 117 is provided between a PMOS transistor 111 and node N11 of the input stage to prevent leakage between V.sub.CC and 1/2V.sub.CC. As a result, an enable signal ENB goes to a high level, the circuit enters the operating state, address bit signal Ai is input, and the time needed to shift the level of node N11 to V.sub.CC or 0 V becomes short.