Nagano, Japan

Takahiro Sato

This inventor holds 20 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignees: Fuji Electric Co., Ltd., Fuji Electric Device Technology Co., Ltd., Seiko Epson Corporation. Active years: 1993-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takahiro Sato. Retrieved from https://idiyas.com/inventor/takahiro-sato-34l5bnmf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 20 

% Patents Active = 100.0

Average Co-Inventor Count = 4.7

ph-index = 14

Forward Citations = 637(Granted Patents)


Company Filing History:


Years Active: 1993-2006

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Areas of Expertise:
Super-Junction
Semiconductor Device
Vertical Field Effect Transistor
Manufacturing Method
Lateral Super-Junction
Breakdown Voltage Limiter
Bidirectional Device
Drift Layer
Low-Noise Composite Magnetic Head
20 patents (USPTO):Explore Patents

Title: The Innovations of Takahiro Sato: A Pioneer in Semiconductor Technology

Introduction: Takahiro Sato, a prominent inventor based in Nagano, Japan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 20 patents, Sato has pushed the boundaries of innovation in his domain, particularly focusing on the development of novel semiconductor devices.

Latest Patents: One of Takahiro Sato's latest patents is for a super-junction semiconductor device and method of manufacturing the same. This groundbreaking invention discloses a semiconductor device designed to create a peripheral portion with a breakdown voltage that exceeds that found in the drain drift layer, all without the need for a guard ring or field plate. The preferred embodiment of this invention includes a drain drift region with an alternating conductivity type layer, featuring n drift current path regions and p partition regions arranged in an alternating manner. Additionally, the breakdown withstanding region comprises a second layer of alternating conductivity types as well. This unique configuration allows the device to operate efficiently in the ON-state while being depleted in the OFF-state, thus ensuring a higher breakdown voltage in critical areas of the semiconductor chip.

Career Highlights: Takahiro Sato has held notable positions in respected companies such as Fuji Electric Co., Ltd. and Fuji Electric Device Technology Co., Ltd. His career has been marked by a series of innovative contributions that highlight his expertise and commitment to advancing semiconductor technology.

Collaborations: Sato has collaborated with esteemed professionals in the field, including Yasuhiko Onishi and Susumu Iwamoto. These partnerships have facilitated the exchange of knowledge and ideas, contributing to the development of advanced technologies and furthering the impact of his work.

Conclusion: Takahiro Sato's contributions to semiconductor technology are evidenced by his impressive array of patents and collaborations. His innovative work continues to influence the industry, setting a precedent for future advancements in the field. As technology evolves, Sato's inventions will likely play a crucial role in shaping the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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