The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Oct. 03, 2003
Susumu Iwamoto, Nagano, JP;
Tatsuhiko Fujihira, Nagano, JP;
Katsunori Ueno, Nagano, JP;
Yasuhiko Onishi, Nagano, JP;
Takahiro Sato, Nagano, JP;
Tatsuji Nagaoka, Nagano, JP;
Susumu Iwamoto, Nagano, JP;
Tatsuhiko Fujihira, Nagano, JP;
Katsunori Ueno, Nagano, JP;
Yasuhiko Onishi, Nagano, JP;
Takahiro Sato, Nagano, JP;
Tatsuji Nagaoka, Nagano, JP;
Abstract
A semiconductor device facilitates obtaining a higher breakdown voltage in the portion of the semiconductor chip around the drain drift region and improving the avalanche withstanding capability thereof. A vertical MOSFET according to the invention includes a drain layer; a drain drift region on drain layer, drain drift region including a first alternating conductivity type layer; a breakdown withstanding region (the peripheral region of the semiconductor chip) on drain layer and around drain drift region, breakdown withstanding region providing substantially no current path in the ON-state of the MOSFET, breakdown withstanding region being depleted in the OFF-state of the MOSFET, breakdown withstanding region including a second alternating conductivity type layer, and an under region below a gate pad, and the under region including a third alternating conductivity type layer.