The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Oct. 17, 2001
Susumu Iwamoto, Nagano, JP;
Tatsuhiko Fujihira, Nagano, JP;
Katsunori Ueno, Nagano, JP;
Yasuhiko Onishi, Nagano, JP;
Takahiro Sato, Nagano, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
A reliable super-junction semiconductor device is provided that facilitates relaxing the tradeoff relation between the on-resistance and the breakdown voltage and improving the avalanche withstanding capability under an inductive load. The super-junction semiconductor device includes an active region including a thin first alternating conductivity type layer and a heavily doped n -type intermediate drain layer between first alternating conductivity type layer and an n -type drain layer, and a breakdown withstanding region including a thick second alternating conductivity type layer. Alternatively, active region includes a first alternating conductivity type layer and a third alternating conductivity type layer between first alternating conductivity type layer and n -type drain layer, third alternating conductivity type layer being doped more heavily than first alternating conductivity type layer.