The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
Mar. 19, 2001
Susumu Iwamoto, Nagano, JP;
Tatsuhiko Fujihira, Nagano, JP;
Katsunori Ueno, Nagano, JP;
Yasuhiko Onishi, Nagano, JP;
Takahiro Sato, Nagano, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
A super-junction semiconductor is provided that facilitates easy mass-production thereof, reducing the tradeoff relation between the on-resistance and the breakdown voltage, obtaining a high breakdown voltage and reducing the on-resistance to increase the current capacity thereof. The super-junction semiconductor device includes a semiconductor chip having a first major surface and a second major surface facing in opposite to the first major surface; a layer with low electrical resistance on the side of the second major surface; a first alternating conductivity type layer on low resistance layer, and a second alternating conductivity type layer on the first alternating conductivity type layer. The first alternating conductivity type layer including regions of a first conductivity type and regions of a second conductivity type arranged alternately with each other. The second alternating conductivity type layer including regions of the first conductivity type and regions of the second conductivity type arranged alternately with each other. The spacing between the pn-junctions in the second alternating conductivity type layer is wider than the spacing between the pn-junctions in the first alternating conductivity type layer.