Singapore, Singapore

Taiebeh Tahmasebi

USPTO Granted Patents = 14 

Average Co-Inventor Count = 3.2

ph-index = 2

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 2017-2020

where 'Filed Patents' based on already Granted Patents

14 patents (USPTO):

Title: Taiebeh Tahmasebi: Innovator in Magnetic Memory Technology

Introduction

Taiebeh Tahmasebi is a prominent inventor based in Singapore, known for his significant contributions to the field of magnetic memory technology. With a total of 14 patents to his name, he has made remarkable advancements that enhance the performance and stability of memory devices.

Latest Patents

His latest patents include innovative solutions such as a storage layer for magnetic memory with high thermal stability. This invention presents a method for forming magnetic tunnel junction (MTJ) elements, which consist of a fixed magnetic layer, a tunneling barrier layer, and a composite free magnetic layer. The composite free magnetic layer features an insertion layer that increases the overall thickness of the free layer, thereby decreasing switching current and enhancing thermal stability. The oxidized layer may consist of materials like MgO or HfO, and a surface layer can be added to further improve magnetic anisotropy.

Another notable patent involves magnetic random access memory structures and integrated circuits. This invention provides a spin transfer torque magnetic random access memory structure with a perpendicular magnetic orientation. It includes a bottom electrode, a base layer with a seed layer and a roughness suppression layer, and a hard layer positioned above the base layer. The structure also features an MTJ element with a perpendicular orientation and a top electrode.

Career Highlights

Taiebeh Tahmasebi is currently employed at Globalfoundries Singapore Pte. Ltd., where he continues to push the boundaries of memory technology. His work has been instrumental in developing advanced memory solutions that are crucial for modern computing applications.

Collaborations

Throughout his career, he has collaborated with talented individuals such as Chim Seng Seet and Vinayak Bharat Naik, contributing to a dynamic and innovative work environment.

Conclusion

Taiebeh Tahmasebi's contributions to magnetic memory technology exemplify his dedication to innovation and excellence in the field. His patents not only enhance the performance of memory devices but also pave the way for future advancements in technology.

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