The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Mar. 28, 2018
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Taiebeh Tahmasebi, Singapore, SG;
Dimitri Houssameddine, Singapore, SG;
Chenchen Wang, Singapore, SG;
Michael Nicolas Albert Tran, Singapore, SG;
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Abstract
Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode and a base layer over the bottom electrode. The base layer includes a seed layer and a roughness suppression layer. The spin transfer torque magnetic random access memory structure further includes a hard layer over the base layer. Also, the spin transfer torque magnetic random access memory structure includes a magnetic tunnel junction (MTJ) element with a perpendicular orientation over the hard layer and a top electrode over the MTJ element.