The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Mar. 28, 2016
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Taiebeh Tahmasebi, Singapore, SG;
Chim Seng Seet, Singapore, SG;
Vinayak Bharat Naik, Singapore, SG;
Chenchen Jacob Wang, Singapore, SG;
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Abstract
Memory cells and method of forming thereof are presented. The method includes forming a magnetic tunnel junction (MTJ) element which includes a fixed magnetic layer, a tunneling barrier layer and a composite free magnetic layer. The composite free magnetic layer includes an insertion layer between first and second free magnetic layers. The insertion layer includes an oxide or oxidized layer. The insertion layer increases the overall thickness of the free layer, decreasing switching current as well as thermal stability. The oxidized layer may be MgO or HfO. A surface layer may be provided over the oxide or oxidized layer to further enhance magnetic anisotropy to further decrease switching current. The surface layer is Ta, Ti or Hf.