The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Jun. 28, 2017
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Taiebeh Tahmasebi, Singapore, SG;
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits and/or memory cells are provided. An exemplary method for fabricating integrated circuit includes forming a bottom electrode and forming a fixed layer disposed over the bottom electrode. The fixed layer includes a hard layer disposed over a base layer. The base layer includes a seed layer of nickel (Ni) and chromium (Cr) and has a thickness of less than about 100 Angstrom (A). The method further includes forming at least a first tunnel barrier layer over the hard layer, forming a storage layer over the first tunnel barrier layer, and forming a top electrode over the storage layer.