Company Filing History:

5 out of 336

Hitachi Ulsi Systems Co., Ltd.

patents

4 out of 3,781

Renesas Technology Corp.

patents

2 out of 7,529

Renesas Electronics Corporation

patents

4. 6 out of 832,880

Other

patents

where one patent can have more than one assignee

Years Active: 2002-2013

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8476138 - Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device (2013-07-02),

2. 7972920 - Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device (2011-07-05),

3. 7701020 - Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device (2010-04-20),

4. 7495289 - Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device (2009-02-24),

5. 7190031 - Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device (2007-03-13),

6. 7161215 - Semiconductor memory device and method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device (2007-01-09),

7. 6821871 - Method for manufacturing semiconductor device, substrate treatment method, and semiconductor manufacturing apparatus (2004-11-23),

8. 6770528 - Method of forming a data-storing capacitive element made in an insulating film on a semiconductor substrate (2004-08-03),

9. 6717202 - HSG semiconductor capacitor with migration inhibition layer (2004-04-06),

10. 6632721 - Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains (2003-10-14),

11. 6524927 - Semiconductor device and method of fabricating the same (2003-02-25),

12. 6444405 - Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductors substrate (2002-09-03),

Title: Innovator Spotlight: Tadanori Yoshida, Pioneering Mind in Semiconductor Technology

Introduction: Tadanori Yoshida, a brilliant inventor hailing from Sayama, JP, has left an indelible mark in the field of semiconductor technology with a remarkable portfolio of 12 patents.

Latest Patents: Among his recent patents are groundbreaking innovations such as the Semiconductor Memory Device, Vertical MISFET, and manufacturing methods for these cutting-edge technologies. His Vertical MISFETs, characterized by rectangular pillar laminated bodies and silicon film composition, have revolutionized the landscape of semiconductor devices.

Career Highlights: Throughout his illustrious career, Tadanori Yoshida has contributed significantly to companies like Hitachi ULSI Systems Co., Ltd., where his inventive genius has flourished. His expertise in semiconductor design and manufacturing processes has propelled him to the forefront of innovation in the industry.

Collaborations: Collaborating closely with esteemed colleagues Hiraku Chakihara and Kousuke Okuyama, Tadanori Yoshida has fostered a culture of innovation and excellence. Together, they have pushed the boundaries of semiconductor technology, creating solutions that are paving the way for the future.

Conclusion: Tadanori Yoshida's relentless pursuit of innovation and his groundbreaking work in semiconductor technology stand as a testament to his exceptional talent and vision. His patents and inventions continue to impact the industry, shaping the way for advancements in semiconductor technology.

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