The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Oct. 17, 2002
Yasuhiro Sugawara, Akishima, JP;
Ryouichi Furukawa, Ome, JP;
Toshio Uemura, Niiza, JP;
Akira Takamatsu, Hamura, JP;
Hirohiko Yamamoto, Hachiouji, JP;
Tadanori Yoshida, Sayama, JP;
Masayuki Ishizaka, Kodaira, JP;
Shinpei Iljima, Akishima, JP;
Yuzuru Ohji, Hinode-machi, JP;
Other;
Abstract
A first silicon film is so formed as to extend along the inner surface of trenches formed in a silicon oxide film , an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode of a capacitance device can be lowered.